DIELECTRIC BEHAVIOR OF AMORPHOUS INDIUM OXIDE THIN-FILMS

被引：5

作者：

BALASUBRAMANIAN, A

RADHAKRISHNAN, M

BALASUBRAMANIAN, C

机构：

[1] ANNAMALAI UNIV,ANNAMALAINAGAR 608002,INDIA

[2] BHARATHIAR UNIV,DEPT PHYS,COIMBATORE 641046,INDIA

来源：

THIN SOLID FILMS | 1990年 / 193卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(90)90253-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium oxide thin films have been deposited in vacuum (10(-5) Torr) by thermal evaporation of indium oxide (In2O3) powder using an electron beam. The deposited films were annealed in air and in oxygen at 473 K for 2h. Pure aluminum electrodes were deposited using suitable masks to form the sandwich structure Al-In2O3-Al. Using this metal-insulator-metal structure, the aging effect and variations in capacitance and dielectric loss were studied in the frequency range 200 Hz to 30 kHz at different temperatures. A negative temperature coefficient of capacitance (TCC) was observed for films of various thicknesses in different temperature ranges. The variation of dielectric loss (tan-delta), measured at 1kHz, with temperature was characterized by loss peaks which were found to shift towards the low temperature region with increasing thickness. Cole-Cole plot were drawn and the spread in mean relaxation time was also determined at different temperatures; the results are discussed.

引用

页码：981 / 989

页数：9

共 21 条

[1] DIELECTRIC PROPERTIES OF THIN FILMS OF ALUMINIUM OXIDE AND SILICON OXIDE [J].