DAMAGED LAYERS IN ABRADED SILICON SURFACES

被引：13

作者：

PUGH, EN

SAMUELS, LE

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 12期

关键词：

D O I：

10.1149/1.2426021

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1429 / 1431

页数：3

共 11 条

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[5] ETCHING OF ABRADED GERMANIUM SURFACES WITH CP-4 REAGENT [J].

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SAMUELS, LE .

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PUGH, EN ;

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[7] DISLOCATION ARRAYS PRODUCED IN GERMANIUM BY ROOM-TEMPERATURE DEFORMATION [J].

PUGH, EN ;

SAMUELS, LE .

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[8] A METALLOGRAPHIC INVESTIGATION OF THE DAMAGED LAYER IN ABRADED GERMANIUM SURFACES [J].

PUGH, EN ;

SAMUELS, LE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (11) :1043-1047

[9] DAMAGED LAYERS IN ABRADED (111) SURFACES OF INSB [J].

PUGH, EN ;

SAMUELS, LE .

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[10]

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