NONLINEAR EQUIVALENT CIRCUIT FOR IMPATT DIODES

被引:6
作者
GUPTA, MS
机构
[1] MIT, RES LAB ELECTR, CAMBRIDGE, MA 02139 USA
[2] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1016/0038-1101(76)90127-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:23 / 26
页数:4
相关论文
共 18 条
[1]   ANALOGUE-COMPUTER MODEL FOR AN AVALANCHE-DIODE OSCILLATOR [J].
CLAASSEN, M ;
HARTH, W .
ELECTRONICS LETTERS, 1969, 5 (10) :218-&
[2]   LARGE-SIGNAL SILICON AND GERMANIUM AVALANCHE-DIODE CHARACTERISTICS [J].
DECKER, DR ;
DUNN, CN ;
FRANK, RL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :872-&
[3]   COMPUTER-AIDED SMALL-SIGNAL CHARACTERIZATION OF IMPATT DIODES [J].
DUNN, CN ;
DALLEY, JE .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (09) :691-+
[4]   ELECTRONIC TUNING EFFECTS IN READ MICROWAVE AVALANCHE DIODE [J].
GILDEN, M ;
HINES, ME .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :169-&
[5]   LARGE-SIGNAL EQUIVALENT CIRCUITS OF AVALANCHE TRANSIT-TIME DEVICES [J].
GREILING, PT ;
HADDAD, GI .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1970, MT18 (11) :842-&
[6]   CURRENT EXCITED LARGE-SIGNAL ANALYSIS OF IMPATT DEVICES AND ITS CIRCUIT IMPLICATIONS [J].
GUPTA, M ;
LOMAX, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) :395-399
[7]   SMALL-SIGNAL AND NOISE EQUIVALENT CIRCUIT FOR IMPATT DIODES [J].
GUPTA, MS .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (09) :591-594
[8]   LARGE-SIGNAL EQUIVALENT CIRCUIT FOR IMPATT-DIODE CHARACTERIZATION AND ITS APPLICATION TO AMPLIFIERS [J].
GUPTA, MS .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (11) :689-694
[9]  
Hulin R., 1970, Electronics Letters, V6, P849, DOI 10.1049/el:19700585
[10]   PROPERTIES OF A NEW AVALANCHE DIODE OSCILLATOR COMPUTED BY A LARGE-SIGNAL, SELF-CONSISTENT SIMULATION [J].
KAWARADA, K ;
MIZUSHIMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (03) :310-+