PHOTOELECTRICAL AND OPTICAL STUDY OF P-TYPE A-SI-H USED AS A PHOTORECEPTOR

被引：17

作者：

TRISKA, A ^{[1
]}

SHIMIZU, I ^{[1
]}

KOCKA, J ^{[1
]}

TICHY, L ^{[1
]}

VANECEK, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, YOKOHAMA, KANAGAWA 227, JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90628-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：493 / 496

页数：4

共 10 条

[1] EFFECT OF BORON DOPING AND ITS PROFILE ON CHARACTERISTICS OF P-I-N A-SI-H SOLAR-CELLS
HARUKI, H
SAKAI, H
KAMIYAMA, M
UCHIDA, Y
[J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 441 - 455
[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[3] COMPARISON OF THE DENSITY OF GAP STATES IN A-SI-H FOUND BY DIFFERENT METHODS
KOCKA, J
VANECEK, M
KOZISEK, Z
STIKA, O
BEICHLER, J
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 293 - 296
[4] NAGELS P, 1983, UNPUB PHYS STAT SO A
[5] THE ROLE OF THE BLOCKING STRUCTURE IN HYDROGENATED AMORPHOUS-SILICON VIDICON TARGETS
ODA, S
SAITO, K
TOMITA, H
SHIMIZU, I
INOUE, E
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7275 - 7280
[6] ENERGY-BAND TAILS AND THE OPTICAL-ABSORPTION EDGE - THE CASE OF A-SI-H
REDFIELD, D
[J]. SOLID STATE COMMUNICATIONS, 1982, 44 (09) : 1347 - 1349
[7] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE
TIEDJE, T
CEBULKA, JM
MOREL, DL
ABELES, B
[J]. PHYSICAL REVIEW LETTERS, 1981, 46 (21) : 1425 - 1428
[8] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H
VANECEK, M
KOCKA, J
STUCHLIK, J
KOZISEK, Z
STIKA, O
TRISKA, A
[J]. SOLAR ENERGY MATERIALS, 1983, 8 (04): : 411 - 423
[9] VANECEK M, 1983, UNPUB PHYS STAT SO B
[10] ANOMALOUS OPTICAL AND STRUCTURAL-PROPERTIES OF B-DOPED A-SI-H
YAMASAKI, S
MATSUDA, A
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12): : L789 - L791

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