IDENTIFICATION OF THE ISOLATED ARSENIC ANTISITE DEFECT IN ELECTRON-IRRADIATED GALLIUM-ARSENIDE AND ITS RELATION TO THE EL2 DEFECT

被引：46

作者：

KRAMBROCK, K ^{[1
]}

SPAETH, JM ^{[1
]}

DELERUE, C ^{[1
]}

ALLAN, G ^{[1
]}

LANNOO, M ^{[1
]}

机构：

[1] INST SUPER ELECTRON NORD,F-50046 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1481

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In semi-insulating GaAs, which was electron irradiated at 4.2 K and kept below 80 K, the isolated arsenic antisite As(Ga) defect could be identified with optically detected magnetic resonance (ODMR). It decays at about 300 K while an additional As(Ga) related defect is formed. Upon further heating to about 520 K this defect also decays and EL2 is formed. The magnetic circular dichroism of the absorption (MCDA) of the isolated As(Ga) defect has a simple derivativelike structure that is explained theoretically. Its MCDA and ODMR spectra are different from the corresponding EL2 spectra indicating the different microscopic structures of the defects. The isolated As(Ga) defect cannot be bleached into a metastable state at low temperature under the conditions where EL2 is bleached completely.

引用

页码：1481 / 1484

页数：4

共 28 条

[1] ASGA ANTISITE DEFECT IN GAAS [J].