共 31 条
[1]
TRENDS IN THE COHESIVE PROPERTIES OF SP BONDED ELEMENTS
[J].
JOURNAL DE PHYSIQUE,
1983, 44 (12)
:1355-1363
[2]
MODELING THE ELECTRONIC-STRUCTURE OF EL2
[J].
REVUE DE PHYSIQUE APPLIQUEE,
1988, 23 (05)
:817-831
[3]
THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM
[J].
PHYSICAL REVIEW B,
1980, 21 (12)
:5662-5686
[4]
ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC
[J].
PHYSICAL REVIEW B,
1987, 35 (12)
:6154-6164
[5]
BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS
[J].
PHYSICAL REVIEW B,
1986, 33 (10)
:7346-7348
[6]
BARAFF GA, UNPUB
[7]
SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS
[J].
PHYSICAL REVIEW B,
1978, 18 (04)
:1780-1789
[9]
APPLICATION OF GREENS-FUNCTION METHODS TO DEFECTS IN SEMICONDUCTORS
[J].
REVUE DE PHYSIQUE APPLIQUEE,
1980, 15 (03)
:661-669