SPUTTERING DURING ION-IMPLANTATION INTO GALLIUM-ARSENIDE

[1] ION SORPTION IN PRESENCE OF SPUTTERING [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (508): : 299 - &

[2] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &

[3] JOHNSON WS, 1969, PROJECTED RANGE STAT

[4] KRAUTLE H, 1972, INT C ION IMPLANTATI

[5] Krimmel E. F., 1973, Radiation Effects, V19, P83, DOI 10.1080/00337577308232223

[6] ELECTRON-BEAM PENETRATION IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3350 - 3351

[7] TINSLEY AW, 1971, ION IMPLANTATION SEM, P199

[8] MECHANISM OF SIMULTANEOUS IMPLANTATION AND SPUTTERING BY HIGH-ENERGY OXYGEN IONS DURING SECONDARY ION MASS-SPECTROMETRY (SIMS) ANALYSIS [J]. SURFACE SCIENCE, 1974, 44 (01) : 247 - 252

[9] Wilson R.G., 1973, ION BEAMS

[1] ION SORPTION IN PRESENCE OF SPUTTERING [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 79 (508): : 299 - &

[2] SPUTTERING AND STRAIN OF SILICON BY ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) : 480 - &

[3] JOHNSON WS, 1969, PROJECTED RANGE STAT

[4] KRAUTLE H, 1972, INT C ION IMPLANTATI

[5] Krimmel E. F., 1973, Radiation Effects, V19, P83, DOI 10.1080/00337577308232223

[6] ELECTRON-BEAM PENETRATION IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3350 - 3351

[7] TINSLEY AW, 1971, ION IMPLANTATION SEM, P199

[8] MECHANISM OF SIMULTANEOUS IMPLANTATION AND SPUTTERING BY HIGH-ENERGY OXYGEN IONS DURING SECONDARY ION MASS-SPECTROMETRY (SIMS) ANALYSIS [J]. SURFACE SCIENCE, 1974, 44 (01) : 247 - 252

[9] Wilson R.G., 1973, ION BEAMS