THE TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF N-TYPE ALPHA-SI-H AND THE EFFECT OF STAEBLER-WRONSKI DEFECTS

被引：24

作者：

VOMVAS, A ^{[1
]}

FRITZSCHE, H ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90197-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：823 / 826

页数：4

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[1] RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY
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[2] RECOMBINATION OF TRAPPED CARRIERS IN A-SI-H PROBED BY SUBBANDGAP EXCITATION
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 593 - 602
[3] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF A-SI-H AT LOW-TEMPERATURE
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 63 (03) : 313 - 319
[4] TRANSIENT PHOTOCONDUCTIVITY IN N-TYPE A-SI-H
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[J]. PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (04) : 189 - 195
[5] THEORY OF PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING SLOWLY-VARYING TRAP DISTRIBUTIONS
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (24): : 3706 - 3718
[6] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
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[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294