PREPARATION AND CHARACTERIZATION OF TUNGSTEN TIPS FOR SCANNING-TUNNELING-MICROSCOPY

被引:26
作者
CRICENTI, A
PAPARAZZO, E
SCARSELLI, MA
MORETTO, L
SELCI, S
机构
[1] Istituto di Struttura della Materia del Consiglio Nazionale delle Ricerche, I-00044 Frascati
关键词
D O I
10.1063/1.1144891
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Tungsten tips obtained through electrochemical etching have been characterized by scanning electron microscopy, scanning Auger microscopy, and scanning tunneling microscopy. While such tips resulted to be very sharp, a thick oxide layer (approximately 10 nm) is present at the apex. High-vacuum annealing at 1800 K removes most of such oxide.
引用
收藏
页码:1558 / 1560
页数:3
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