ION-BEAM CRYSTALLOGRAPHY OF METAL SILICON INTERFACES - PD-SI(111)

被引：43

作者：

TROMP, R

VANLOENEN, EJ

IWAMI, M

SMEENK, R

SARIS, FW

机构：

来源：

THIN SOLID FILMS | 1982年 / 93卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(82)90100-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：151 / 159

页数：9

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[1] A MODEL ON THE MECHANISM OF ROOM-TEMPERATURE INTERFACIAL INTERMIXING REACTION IN VARIOUS METAL-SEMICONDUCTOR COUPLES - WHAT TRIGGERS THE REACTION
HIRAKI, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2662 - 2665
[2] PRESENCE OF CRITICAL AU-FILM THICKNESS FOR ROOM-TEMPERATURE INTERFACIAL REACTION BETWEEN AU(FILM) AND SI(CRYSTAL SUBSTRATE)
OKUNO, K
ITO, T
IWAMI, M
HIRAKI, A
[J]. SOLID STATE COMMUNICATIONS, 1980, 34 (06) : 493 - 497
[3] ANGLE RESOLVED DETECTION OF CHARGED-PARTICLES WITH A NOVEL TYPE TOROIDAL ELECTROSTATIC ANALYZER
SMEENK, RG
TROMP, RM
KERSTEN, HH
BOERBOOM, AJH
SARIS, FW
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 195 (03): : 581 - 586
[4] TROMP RM, UNPUB SURF SCI