ON THE EFFECTS OF AUGER RECOMBINATION AND ENERGETIC CARRIER LEAKAGE IN GAINASP INP LIGHT-EMITTING DIODES

被引：8

作者：

CHIK, KD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2138 / 2143

页数：6

共 23 条

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[6]

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[7] ANALYSIS OF THE EFFECTS OF RECOMBINATION AND LEAKAGE ON THE STATIC PROPERTIES OF GAINASP INP STRIPE GEOMETRY LASERS [J].

CHIK, KD .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2507-2513

[8] A THEORETICAL-ANALYSIS OF AUGER RECOMBINATION INDUCED ENERGETIC CARRIER LEAKAGE IN GAINASP-INP DOUBLE HETEROJUNCTION LASERS AND LIGHT-EMITTING DIODES [J].

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