LIGHT SATURATION OF INGAASP-INP LEDS

被引：22

作者：

DUTTA, NK

NELSON, RJ

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1982年 / 18卷 / 03期

关键词：

D O I：

10.1109/JQE.1982.1071547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：375 / 381

页数：7

共 26 条

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DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380

[7] GAIN MEASUREMENTS IN 1.3-MUM INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

DUTTA, NK ;

NELSON, RJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (01) :44-49

[8] TEMPERATURE-DEPENDENCE OF THRESHOLD AND ELECTRICAL CHARACTERISTICS OF INGAASP-INP DH LASERS [J].

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[9]

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[10]

DUTTA NK, 1982, J APPL PHYS JAN

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