SURFACE-STRUCTURE AND THE ORIGIN OF 1/4(111) INTERFACIAL DISLOCATIONS IN NISI2/SI EPITAXIAL-FILMS

被引：16

作者：

POND, RC ^{[1
]}

CHERNS, D ^{[1
]}

机构：

[1] UNIV BRISTOL,HH WILLS PHYS LAB,BRISTOL BS8 1TL,AVON,ENGLAND

来源：

关键词：

D O I：

10.1016/0039-6028(85)90539-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1197 / 1202

页数：6

共 7 条

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CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05) :849-862

[2] THE ATOMIC-STRUCTURE OF THE NISI2-(001)SI INTERFACE [J].

CHERNS, D ;

HETHERINGTON, CJD ;

HUMPHREYS, CJ .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1984, 49 (01) :165-177

[3]

CHERNS D, 1983, P MATERIALS RES SOC, P423

[4]

GIBSON JM, 1982, MATERIALS RES SOC S

[5]

NABARRO FR, 1980, DISLOCATIONS SOLIDS

POND, RC ;

GOWERS, JP ;

JOYCE, BA .

[7] BICRYSTALLOGRAPHY [J].

POND, RC ;

VLACHAVAS, DS .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1983, 386 (1790) :95-143