学术探索
学术期刊
新闻热点
数据分析
智能评审

SURFACE-STRUCTURE AND THE ORIGIN OF ANTISITE DOMAINS IN GAAS-GE EPITAXIAL-FILMS

被引：15
作者：
POND, RC [1 ]
GOWERS, JP [1 ]
JOYCE, BA [1 ]
机构：
[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
来源：
SURFACE SCIENCE | 1985年 / 152卷 / APR期
关键词：
D O I：
10.1016/0039-6028(85)90538-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：1191 / 1196
页数：6
相关论文
共 6 条
[1]   ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J].
KROEMER, H ;
POLASKO, KJ ;
WRIGHT, SC .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :763-765
[2]   SOME OBSERVATIONS ON GE-GAAS(001) AND GAAS-GE(001) INTERFACES AND FILMS [J].
NEAVE, JH ;
LARSEN, PK ;
JOYCE, BA ;
GOWERS, JP ;
VANDERVEEN, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :668-674
[3]   INTERFACIAL DEFECTS IN NON-HOLOSYMMETRIC AND NON-SYMMORPHIC CRYSTALS [J].
POND, RC .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1983, 47 (06) :L49-L55
[4]   BICRYSTALLOGRAPHY [J].
POND, RC ;
VLACHAVAS, DS .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1983, 386 (1790) :95-143
[5]  
POND RC, 1983, P MATERIALS RES SOC, P273
[6]   POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J].
WRIGHT, SL ;
INADA, M ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :534-539
1