INTERFACIAL DEFECTS IN NON-HOLOSYMMETRIC AND NON-SYMMORPHIC CRYSTALS

被引：18

作者：

POND, RC

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1983年 / 47卷 / 06期

关键词：

D O I：

10.1080/01418618308243119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L49 / L55

页数：7

共 10 条

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CHERNS, D ;

ANSTIS, GR ;

HUTCHISON, JL ;

SPENCE, JCH .

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[3]

CHERNS D, 1983, UNPUB PHIL MAG A

[4]

HETHERINGTON CJD, 1983, MICROSCOPY SEMICONDU

[5] ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J].

MORIZANE, K .

JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) :249-254

[6]

Pond R. C., 1979, Philosophical Transactions of the Royal Society of London A (Mathematical and Physical Sciences), V292, P449, DOI 10.1098/rsta.1979.0069

[7]

Pond R. C., 1980, GRAIN BOUNDARY STRUC, P13

[8]

POND RC, 1983, UNPUB PHIL MAG A

[9]

POND RC, 1983, P R SOC A, V385, P95

[10]

POND RC, 1983, MICROSCOPY SEMICONDU

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