NITROCELLULOSE AS A POSITIVE OR NEGATIVE SELF-DEVELOPING RESIST

被引：25

作者：

GEIS, MW

RANDALL, JN

MOUNTAIN, RW

WOODHOUSE, JD

BROMLEY, EI

ASTOLFI, DK

ECONOMOU, NP

机构：

[1] MIT, Lincoln Lab, Lexington, MA, USA, MIT, Lincoln Lab, Lexington, MA, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：343 / 346

页数：4

共 6 条

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[4] LARGE AREA ION-BEAM ASSISTED ETCHING OF GAAS WITH HIGH ETCH RATES AND CONTROLLED ANISOTROPY [J].

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EFREMOW, NN .

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[5]

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[6] SURFACE PROCESSES IN PLASMA-ASSISTED ETCHING ENVIRONMENTS [J].

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