HIGH-TEMPERATURE OXIDATION OF ION-PLATED TIN AND TIALN FILMS

被引：185

作者：

ICHIMURA, H

KAWANA, A

机构：

[1] Sumitomo Metal Mining Co., Ltd., Central Research Laboratory 18–5, 3 Chome, Nakakokubun

来源：

JOURNAL OF MATERIALS RESEARCH | 1993年 / 8卷 / 05期

关键词：

D O I：

10.1557/JMR.1993.1093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high-temperature oxidation of TiN, Ti0.9Al0.1N, and Ti0.6Al0.4N films which were deposited onto stainless steel substrates using an arc ion-plating apparatus was studied at temperatures ranging from 923 to 1173 K for 0.6 to 60 ks in air. The oxidation rate obtained from mass gain as a function of time was found to fit well to a parabolic time dependence. From their temperature dependence, the apparent activation energies of oxidation were determined. With increasing Al contents, the oxidation rate decreased, and the activation energies of oxidation reaction increased. Formed oxide layers were analyzed by XRD, SEM, and EPMA. With increased Al content in TiAlN films, the rate-determining step changes from oxygen ion diffusion in formed rutile to oxygen or aluminum ion diffusion in the formed Al2O3 layer.

引用

页码：1093 / 1100

页数：8

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