ELECTROOPTIC IMAGERY OF HIGH-VOLTAGE GAAS PHOTOCONDUCTIVE SWITCHES

被引：4

作者：

FALK, RA ^{[1
]}

ADAMS, JC ^{[1
]}

CAPPS, CD ^{[1
]}

FERRIER, SG ^{[1
]}

KRINSKY, JA ^{[1
]}

机构：

[1] BOEING CO,DEF & SPACE GRP,OPT DEVICE DEV LAB,SEATTLE,WA 98124

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 01期

关键词：

D O I：

10.1109/16.370037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present electro-optic images of GaAs high-voltage photoconductive switches utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects is shown.

引用

页码：43 / 49

页数：7

共 20 条

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