ION-BEAM SENSITIVITY OF POLYMER RESISTS

被引：66

作者：

RYSSEL, H

HABERGER, K

KRANZ, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.571210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1358 / 1362

页数：5

共 10 条

[1]

CLAMPITT R, 1978, I PHYS C SER, V38, P12

[2]

CSEPREGI L, 1980, MICROCIRCUIT ENG AMS

[3] ION-BEAM EXPOSURE CHARACTERISTICS OF RESISTS [J].

HALL, TM ;

WAGNER, A ;

THOMPSON, LF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1889-1892

[4] H-2 AND RARE-GAS FIELD-ION SOURCE WITH HIGH ANGULAR CURRENT [J].

HANSON, GR ;

SIEGEL, BM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1875-1878

[5]

HEUBERGER A, 1980, FESTKORPERPROBLEME, V20, P259

[6] ION-BEAM EXPOSURE OF RESIST MATERIALS [J].

KOMURO, M ;

ATODA, N ;

KAWAKATSU, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) :483-490

[7]

MORIWAKI K, 1979, MICROCIRCUITS ENG AA

[8] ION-BEAM LITHOGRAPHY FOR IC-FABRICATION WITH SUBMICROMETER FEATURES [J].

RENSCH, DB ;

SELIGER, RL ;

CSANKY, G ;

OLNEY, RD ;

STOVER, HL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1897-1900

[9]

RYSSEL H, 1980, MICROCIRCUIT ENG AMS

[10]

SELIGER RL, 1980, J VAC SCI TECHNOL, V17, P1610

← 1 →