EVIDENCE FOR COMPLEX ACCEPTORS RELATED TO CU AND LI IN GAAS

被引：15

作者：

GISLASON, HP ^{[1
]}

WANG, ZG ^{[1
]}

MONEMAR, B ^{[1
]}

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22007 LUND 7,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 01期

关键词：

D O I：

10.1063/1.335718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：240 / 247

页数：8

共 39 条

[11]

GISLASON HP, UNPUB PHYS REV B

[12]

GISLASON HP, UNPUB

[13]

GROSS EF, 1969, FIZ TVERD TELA+, V11, P277

[14] COHERENT MODEL FOR DEEP-LEVEL PHOTO-LUMINESCENCE OF CU-CONTAMINATED N-TYPE GAAS SINGLE-CRYSTALS [J].

GUISLAIN, HJ ;

DEWOLF, L ;

CLAUWS, P .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :83-108

[15]

HALLAIS J, 1976, C SERIES I PHYSICS B, V33, P220

[16] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5347-&

[17] OPTICAL PROPERTIES OF N-TYPE GAAS .3. RELATIVE BAND-EDGE RECOMBINATION EFFICIENCY OF SI- AND TE-DOPED CRYSTALS BEFORE AND AFTER HEAT TREATMENT [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4591-&

[18]

ILLEGEMS M, 1975, J APPL PHYS, V46, P3059

[19] PHOTOLUMINESCENCE STUDIES IN IRRADIATED SI-DOPED GALLIUM-ARSENIDE [J].

JEONG, M ;

SHIRAFUJI, J ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) :109-119

[20] THERMAL-CONVERSION OF GAAS [J].

KLEIN, PB ;

NORDQUIST, PER ;

SIEBENMANN, PG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4861-4869

← 1 2 3 4 →