GLOBAL PHASE-DIAGRAM FOR THE QUANTUM HALL-EFFECT - AN EXPERIMENTAL PICTURE

被引：103

作者：

KRAVCHENKO, SV ^{[1
]}

MASON, W ^{[1
]}

FURNEAUX, JE ^{[1
]}

PUDALOV, VM ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST HIGH PRESSURE PHYS,TROITSK 142092,RUSSIA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.75.910

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest extended state as B --> 0. Using our data, we construct an experimental-based ''disorder vs filling factor'' phase diagram for the integer quantum Hall effect (QHE). Generalizing this diagram to the case of the fractional QHE, we show that it is consistent with the recently observed direct transitions between insulator and fractional QHE at nu = 2/5, 2/7, and 2/9.

引用

页码：910 / 913

页数：4

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