RADIATION-INDUCED CHARGE TRAPPING AT SILICON SAPPHIRE SUBSTRATE INTERFACE

被引：19

作者：

NEAMEN, D ^{[1
]}

SHEDD, W ^{[1
]}

BUCHANAN, B ^{[1
]}

机构：

[1] USAF,CAMBRIDGE RES LABS,AIR FORCE SYST COMMAND,BEDFORD,MA 01730

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1974年 / NS21卷 / 06期

关键词：

D O I：

10.1109/TNS.1974.6498930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：211 / 216

页数：6

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[3]

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ANDERSON, JC .

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[5]

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[7] VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE [J].

IPRI, AC .

APPLIED PHYSICS LETTERS, 1972, 20 (01) :1-&

[8]

KJAR RA, 1973, IEEE NUCL S, VNS20, P315

[9] BUILT-IN VOLTAGE AND SPACE-CHARGE LAYER CAPACITANCE OF P-N-JUNCTIONS [J].

KUZMICZ, W ;

SWIT, A .

SOLID-STATE ELECTRONICS, 1974, 17 (05) :457-463

[10] A SIMPLE DERIVATION FIELD-EFFECT TRANSISTOR CHARACTERISTICS [J].

MIDDLEBROOK, RD .

PROCEEDINGS OF THE IEEE, 1963, 51 (08) :1146-&

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