MONOLITHIC INTEGRATED SCHOTTKY DIODE FOR MICROWAVE MIXERS

被引：7

作者：

WORTMANN, AK ^{[1
]}

KOHN, EE ^{[1
]}

机构：

[1] TECH UNIV AACHEN,INST SEMICOND ELECTR,AACHEN,FED REP GER

来源：

关键词：

D O I：

10.1016/0038-1101(75)90173-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1095 / &

共 6 条

[1]

BENEKING H, 1972, Patent No. 23217972

[2]

BENEKING H, 1971, P EUROP MICROWAVE C

[3] GALLIUM ARSENIDE SELF-ALIGNED GATE FIELD-EFFECT TRANSISTORS [J].

DRIVER, MC ;

KIM, HB ;

BARRETT, DL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1244-&

[4] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J].

HEIME, K ;

KONIG, U ;

KOHN, E ;

WORTMANN, A .

[5]

PILLER U, 1975, AEU-INT J ELECTRON C, V29, P81

[6]

WORTMANN A, 1974, 4TH P EUR MICR C MON