ELECTRON LOCALIZATION AND THE QUANTIZED HALL RESISTANCE IN SILICON INVERSION-LAYERS

被引：8

作者：

WAKABAYASHI, J

MYRON, HW

PEPPER, M

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE,ENGLAND

[2] CATHOLIC UNIV NIJMEGEN,DEPT PHYS,NIJMEGEN,NETHERLANDS

[3] GEC,HIRST RES CTR,PLC,WEMBLEY,ENGLAND

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90625-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：691 / 693

页数：3

共 18 条

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[6] TEMPERATURE-DEPENDENCE OF MAGNETO-CONDUCTIVITY IN GROUND LANDAU-LEVEL IN SILICON INVERSION LAYERS [J].

KAWAJI, S ;

WAKABAYASHI, J .

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[7] QUANTUM GALVANOMAGNETIC PROPERTIES OF N-TYPE INVERSION LAYERS ON SI(100) MOSFET [J].

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[8]

KAWAJI S, 1981, SPRINGER SERIES SOLI, V24, P284

[9]

KAWAJI S, 1981, J PHYS SOC JAPAN, V50, P3829

[10]

LAUGHLIN RB, 1981, PHYS REV B, V23, P5632, DOI 10.1103/PhysRevB.23.5632

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