THEORY AND EXPERIMENT ON THE 1/F-GAMMA NOISE IN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AT LOW DRAIN BIAS

被引：86

作者：

SURYA, C

HSIANG, TY

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.33.4898

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4898 / 4905

页数：8

共 42 条

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