LOW-FREQUENCY NOISE IN HCL PROCESSED IGFETS

[1] Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[2] MEASUREMENT OF LOW-FREQUENCY NOISE FROM 30 TO 300 K [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (12): : 1149 - &

[3] HASLETT JW, 1972, IEEE T ELECTRON DEVI, VED19, P943

[4] HASLETT JW, 1972, DEC IEEE INT EL DEV

[5] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 388 - &

[6] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 747 - +

[7] SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE [J]. ELECTRONICS LETTERS, 1972, 8 (16) : 402 - &

[1] Burgess R.R., 1973, SEMICONDUCTOR SILICO, P363

[2] MEASUREMENT OF LOW-FREQUENCY NOISE FROM 30 TO 300 K [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (12): : 1149 - &

[3] HASLETT JW, 1972, IEEE T ELECTRON DEVI, VED19, P943

[4] HASLETT JW, 1972, DEC IEEE INT EL DEV

[5] EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 388 - &

[6] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 747 - +

[7] SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE [J]. ELECTRONICS LETTERS, 1972, 8 (16) : 402 - &