SURFACE-STATE DENSITY AT (HYDROGEN-CHLORIDE) OXIDE-SILICON INTERFACE

被引：31

作者：

SEVERI, M

SONCINI, G

机构：

来源：

ELECTRONICS LETTERS | 1972年 / 8卷 / 16期

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D O I：

10.1049/el:19720293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：402 / &

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