ORDERING OF OXIDE PRECIPITATES IN OXYGEN IMPLANTED SILICON

被引:28
作者
VANOMMEN, AH
KOEK, BH
VIEGERS, MPA
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10.1063/1.97475
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O59 [应用物理学];
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页码:1062 / 1064
页数:3
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共 12 条
[1]  
Chen C.-E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P702
[3]  
HEMMENT PLF, 1985, P SOC PHOTO-OPT INST, V530, P230, DOI 10.1117/12.946491
[4]   INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF BURIED OXIDE AND SURFACE CRYSTALLINITY DURING HIGH-DOSE OXYGEN IMPLANTATION INTO SI [J].
HOLLAND, OW ;
SJOREEN, TP ;
FATHY, D ;
NARAYAN, J .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1081-1083
[5]  
HOLLAND OW, 1985, P SOC PHOTO-OPT INST, V530, P255, DOI 10.1117/12.946494
[6]  
Izumi K., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P443
[7]  
JASSAUD C, 1985, APPL PHYS LETT, V46, P1046
[8]   ORDERING OF VOIDS AND GAS-BUBBLES IN RADIATION ENVIRONMENTS [J].
KRISHAN, K .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 66 (3-4) :121-155
[9]  
Lam H. W., 1982, VLSI ELECT MICROSTRU, V4, P1
[10]  
SEITZ E, 1976, UCLAENG7690, P201