IDENTIFICATION OF A GRAIN-BOUNDARY PHASE IN HOT-PRESSED SILICON-NITRIDE BY AUGER-ELECTRON SPECTROSCOPY

被引：35

作者：

POWELL, BD ^{[1
]}

DREW, P ^{[1
]}

机构：

[1] UNIV WARWICK,DEPT PHYS,COVENTRY,ENGLAND

来源：

JOURNAL OF MATERIALS SCIENCE | 1974年 / 9卷 / 11期

关键词：

D O I：

10.1007/BF00541759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1867 / 1870

页数：4

共 11 条

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[4] MICROSTRUCTURE OF HOT-PRESSED SILICON-NITRIDE [J].

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[5]

LANGE FW, IN PRESS

[6]

LEVIN EM, 1964, PHASE DIAGRAMS CERAM, P210

[7] INFLUENCE OF BAND STRUCTURE ON AUGER ELECTRON SPECTRUM OF SILICON [J].

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AGUSTUS, PD .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (09) :L174-&

[8]

OYAMA Y, 1973, YOGYO KYOKAI SHI, V81, P34

[9] AUGER-ELECTRON SPECTROSCOPY [J].

RIVIERE, JC .

CONTEMPORARY PHYSICS, 1973, 14 (06) :513-539

[10] ELECTRON-IRRADIATION EFFECT IN AUGER ANALYSIS OF SIO2 [J].

THOMAS, S .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :161-166

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