EPITHERMAL EFFECTS IN POSITRON DEPTH PROFILING MEASUREMENTS

被引：37

作者：

BRITTON, DT ^{[1
]}

RICEEVANS, PC ^{[1
]}

EVANS, JH ^{[1
]}

机构：

[1] UKAEA,HARWELL LAB,DIV MAT DEV,HARWELL OX11 0RA,BERKS,ENGLAND

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1988年 / 57卷 / 03期

关键词：

D O I：

10.1080/09500838808203766

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：165 / 169

页数：5

共 14 条

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[2]

BRITTON DT, 1987, 1987 P EUR M POS STU

[3]

COLEMAN CF, 1976, APPL PHYS, V19, P87

[4]

ELDRUP M, 1986, DEFECTS SOLIDS

[5]

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[6]

Hautojarvi P., 1979, POSITRONS SOLIDS

[7] PRODUCTION OF ENERGETIC POSITRONIUM AT METAL-SURFACES [J].

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[8] POSITRON DIFFUSION IN MO - THE ROLE OF EPITHERMAL POSITRONS [J].

HUOMO, H ;

VEHANEN, A ;

BENTZON, MD ;

HAUTOJARVI, P .

PHYSICAL REVIEW B, 1987, 35 (15) :8252-8255

[9]

MAKHOV AF, 1960, SOV PHYS-SOLID STATE, V2, P1942

[10] VACANCY-TYPE DEFECT DISTRIBUTIONS NEAR ARGON SPUTTERED AL(110) SURFACE STUDIED BY VARIABLE-ENERGY POSITRONS AND MOLECULAR-DYNAMICS SIMULATIONS [J].

MAKINEN, J ;

VEHANEN, A ;

HAUTOJARVI, P ;

HUOMO, H ;

LAHTINEN, J ;

NIEMINEN, RM ;

VALKEALAHTI, S .

SURFACE SCIENCE, 1986, 175 (02) :385-414

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