SCREENING OF LONG-WAVELENGTH LASER AT HIGH-TEMPERATURE AND HIGH-CURRENT LEVELS

被引:4
作者
HIGUCHI, H
OOMURA, E
HIRANO, R
SAKAKIBARA, Y
NAMIZAKI, H
SUSAKI, W
FUJIKAWA, K
机构
关键词
D O I
10.1049/el:19830663
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:976 / 977
页数:2
相关论文
共 4 条
[1]   POSITION OF THE DEGRADATION AND THE IMPROVED STRUCTURE FOR THE BURIED CRESCENT INGAASP/INP (1.3 MU-M) LASERS [J].
HIRANO, R ;
OOMURA, E ;
HIGUCHI, H ;
SAKAKIBARA, Y ;
NAMIZAKI, H ;
SUSAKI, W ;
FUJIKAWA, K .
APPLIED PHYSICS LETTERS, 1983, 43 (02) :187-189
[2]  
HIRANO R, 1983, JPN J APPL PHYS S22, V22, P231
[3]  
MIZUISHI K, 1983, 4TH INT C INT OPT OP
[4]   DEGRADATION MECHANISM IN 1.3 MU-M INGAASP/INP BURIED CRESCENT LASER DIODE AT A HIGH-TEMPERATURE [J].
OOMURA, E ;
HIGUCHI, H ;
HIRANO, R ;
SAKAKIBARA, Y ;
NAMIZAKI, H ;
SUSAKI, W .
ELECTRONICS LETTERS, 1983, 19 (11) :407-408