POLARIZATION CONTROL FOR SURFACE EMITTING LASERS

被引：34

作者：

SHIMUZI, M

MUKAIHARA, T

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Precision and Intelligence Laboratory, Midoriku, Yokohama

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 12期

关键词：

SEMICONDUCTOR LASERS; POLARIZATION;

D O I：

10.1049/el:19910662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A polarisation control method for surface emitting lasers is proposed. By preparing high refractive index films on one side of dielectric multilayer reflector walls, a differential loss for orthogonal polarisations can be provided. A GaAlAs/GaAs device was fabricated based on this design and the polarisation control has been demonstrated up to 1.4 times the threshold.

引用

页码：1067 / 1069

页数：3

共 5 条

[1]

Koyama F., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE71, P1089

[2]

LEE YH, 1990, LEOS ANN M

[3]

MORINAGA M, 1986, IEICE T ELECT J, V69, P59

[4] POLARIZATION CHARACTERISTICS OF MOCVD GROWN GAAS GAALAS CBH SURFACE EMITTING LASERS [J].

SHIMIZU, M ;

KOYAMA, F ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (09) :1774-1775

[5]

UCHIYAMA S, 1986, 12TH EUR C OPT COMM, P37

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