LOW-ENERGY KINETIC THRESHOLD IN THE GROWTH OF CUBIC BORON-NITRIDE FILMS

被引：46

作者：

KIDNER, S

TAYLOR, CA

CLARKE, R

机构：

[1] Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111779

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of cubic boron nitride (cBN) films by magnetron sputtering on Si (100) substrates. The films are grown in the presence of negative substrate bias voltages and a nitrogen plasma produced by an electron cyclotron resonance source. We find evidence for a sharp low-voltage threshold in the substrate bias (-105 V) beyond which the samples are predominantly cBN. The structural quality of the cBN films is optimized in a narrow range of voltages near this threshold. We discuss the important role of energetic ions in the formation of cBN in light of recent theoretical findings.

引用

页码：1859 / 1861

页数：3

共 15 条

[1] ION-ASSISTED PULSED LASER DEPOSITION OF CUBIC BN FILMS ON SI (001) SUBSTRATES [J].