INFRARED REFLECTIVITY STUDIES OF GAXINL-XASYPL-Y QUATERNARY COMPOUNDS

被引：41

作者：

PICKERING, C

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 05期

关键词：

D O I：

10.1007/BF02661007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：901 / 918

页数：18

共 24 条

[1] EVIDENCE FOR ALLOY SCATTERING FROM PRESSURE-INDUCED CHANGES OF ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y [J].

ADAMS, AR ;

TATHAM, HL ;

HAYES, JR ;

ELSABBAHY, AN .

ELECTRONICS LETTERS, 1980, 16 (14) :560-562

[2] FAR-INFRARED SPECTROSCOPIC STUDY OF IN1-XGAXASYP1-Y [J].

AMIRTHARAJ, PM ;

HOLAH, GD ;

PERKOWITZ, S .

PHYSICAL REVIEW B, 1980, 21 (12) :5656-5661

[3] ELECTRON EFFECTIVE-MASS VALUES IN GAXIN1-XSB ALLOYS [J].

AUBIN, MJ ;

THOMAS, MB ;

VANTONGE.EH ;

WOOLLEY, JC .

CANADIAN JOURNAL OF PHYSICS, 1969, 47 (06) :631-+

[4] Infrared reflectivity spectra of the mixed crystal system Ga1-xInxSb [J].

Brodsky, M. H. ;

Lucovsky, G. ;

Chen, M. F. ;

Plaskett, T. S. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08) :3303-3311

[5] INFRARED REFLECTION SPECTRA OF GA1-XINXAS - A NEW TYPE OF MIXED-CRYSTAL BEHAVIOR [J].

BRODSKY, MH ;

LUCOVSKY, G .

PHYSICAL REVIEW LETTERS, 1968, 21 (14) :990-&

[6]

DOLGINOV LM, 1978, SOV PHYS SEMICOND+, V12, P199

[7] MAGNETOPHONON EFFECT IN EPITAXIAL FILMS OF TYPE INP [J].

EAVES, L ;

STRADLIN.RA ;

ASKENAZY, S ;

LEOTIN, J ;

PORTAL, JC ;

ULMET, JP .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (02) :L42-+

[8] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].

GREENE, PD ;

WHEELER, SA ;

ADAMS, AR ;

ELSABBAHY, AN ;

AHMAD, CN .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80

[9]

Hass M., 1967, SEMICONDUCT SEMIMET, V3, P3, DOI DOI 10.1016/S0080-8784(08)60313-0

[10] OPTICAL FREQUENCIES AND DIELECTRIC CONSTANTS OF INP [J].

HILSUM, C ;

FRAY, S ;

SMITH, C .

SOLID STATE COMMUNICATIONS, 1969, 7 (15) :1057-&

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