HIGH-POWER, SINGLE-MODE OPERATION OF AN INGAASP INP LASER WITH A GROOVED TRANSVERSE JUNCTION USING GAIN STABILIZATION

被引：4

作者：

CHEN, TR ^{[1
]}

KOREN, U ^{[1
]}

YU, KL ^{[1
]}

LAU, KY ^{[1
]}

CHIU, LC ^{[1
]}

HASSON, A ^{[1
]}

MARGALIT, S ^{[1
]}

YARIV, A ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93475

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：225 / 228

页数：4

共 9 条

[1]

ABRAMOWITZ M, 1972, HDB MATH FUNCTIONS F, P00685

[2] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J].

KOREN, U ;

YU, KL ;

CHEN, TR ;

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YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (08) :643-645

[3]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P556

[4] TRANSVERSE-MODAL BEHAVIOR OF A TRANSVERSE JUNCTION STRIPE LASER-EXCITED BY A SHORT ELECTRICAL PULSE [J].

LAU, KY ;

YARIV, A .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :641-645

[5]

NAKANO Y, 1981, ELECTRON LETT, V17, P782, DOI 10.1049/el:19810548

[6] HIGH-OUTPUT POWER INGAASP (LAMBDA=1.3-MU-M) STRIP-BURIED HETEROSTRUCTURE LASERS [J].

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WRIGHT, PD ;

BARNES, PA ;

BROWN, RL ;

CELLA, T ;

SOBERS, RG .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :358-360

[7]

THOMPSON GHB, 1979, ELECTRON LETT, V15, P824

[8] CONTROL OF MODE BEHAVIOR IN SEMICONDUCTOR-LASERS [J].

WANG, S ;

CHEN, CY ;

LIAO, ASH ;

FIGUEROA, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (04) :453-468

[9] GROOVE GAINASP LASER ON SEMI-INSULATING INP [J].

YU, KL ;

KOREN, U ;

CHEN, TR ;

CHEN, PC ;

YARIV, A .

ELECTRONICS LETTERS, 1981, 17 (21) :790-792

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