1-D-MINIGAPS IN THE SUBBAND STRUCTURE OF INVERSION-LAYERS ON P-INSB

被引：4

作者：

EVELBAUER, T

MERKT, U

KOTTHAUS, JP

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90620-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：670 / 672

页数：3

共 7 条

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[6] THEORY OF ELECTRONIC-PROPERTIES IN N-CHANNEL INVERSION-LAYERS ON NARROW-GAP SEMICONDUCTORS .1. SUBBAND STRUCTURE OF INSB [J].

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