SPECTROSCOPIC DETERMINATION OF THE ENERGY GAPS IN THE INVERSION LAYER BAND-STRUCTURE ON VICINAL PLANES OF SI(001)

被引:17
作者
SESSELMANN, W
KOTTHAUS, JP
机构
[1] Physik-Department, Technische Universität München
关键词
D O I
10.1016/0038-1098(79)90433-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Using interband spectroscopy we have systematically investigated the one-dimensional energy gaps that occur in the electron inversion layer band structure on surfaces of Si tilted by angle θ from (001). While the positions of the gaps are in good agreement with the valley-splitting model by Sham et al., we observe dependences of the size ΔE0 of the lowest gap on electron density Ns, θ and azimuthal angle φ that deviate from theoretical predictions. The observed nonlinear Ns-dependence of ΔE0 is interpreted as a ky-dependence. © 1979.
引用
收藏
页码:193 / 196
页数:4
相关论文
共 14 条