HIGH-FREQUENCY MAGNETIC-CONDUCTIVITY IN SPACE-CHARGE LAYERS ON SEMICONDUCTORS

[1] FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2494 - 2497

[2] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[3] CYCLOTRON-RESONANCE OF ELECTRONS IN AN INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 104 - 107

[4] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (17) : 980 - 983

[5] FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 107 - 110

[6] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (20) : 1359 - 1362

[7] INTER-SUBBAND OPTICAL-ABSORPTION IN AN INVERSION LAYER ON A SEMICONDUCTOR SURFACE IN MAGNETIC-FIELDS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 801 - 804

[8] ELECTRON-ELECTRON INTERACTION AND ELECTRONIC PROPERTIES OF SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1978, 73 (01) : 1 - 18

[9] MASS ENHANCEMENT AND SUBHARMONIC STRUCTURE OF CYCLOTRON-RESONANCE IN AN INTERACTING 2-DIMENSIONAL ELECTRON-GAS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (23) : 1383 - 1385

[10] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477

[1] FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI [J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2494 - 2497

[2] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480

[3] CYCLOTRON-RESONANCE OF ELECTRONS IN AN INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 104 - 107

[4] OBSERVATION OF 2-DIMENSIONAL PLASMON IN SILICON INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1977, 38 (17) : 980 - 983

[5] FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J]. PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 107 - 110

[6] FREQUENCY-DEPENDENCE OF ELECTRON CONDUCTIVITY IN SILICON INVERSION LAYER IN METALLIC AND LOCALIZED REGIMES [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (20) : 1359 - 1362

[7] INTER-SUBBAND OPTICAL-ABSORPTION IN AN INVERSION LAYER ON A SEMICONDUCTOR SURFACE IN MAGNETIC-FIELDS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 801 - 804

[8] ELECTRON-ELECTRON INTERACTION AND ELECTRONIC PROPERTIES OF SPACE-CHARGE LAYERS ON SEMICONDUCTOR SURFACES [J]. SURFACE SCIENCE, 1978, 73 (01) : 1 - 18

[9] MASS ENHANCEMENT AND SUBHARMONIC STRUCTURE OF CYCLOTRON-RESONANCE IN AN INTERACTING 2-DIMENSIONAL ELECTRON-GAS [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (23) : 1383 - 1385

[10] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477