BANDWIDTH NARROWING IN N-TYPE MANY-VALLEY SEMICONDUCTORS .2. SELF-CONSISTENT MANY-BODY AND UNRESTRICTED HARTREE-FOCK CLUSTER APPROACHES

被引:9
作者
FABBRI, M
DASILVA, AF
机构
[1] Conselho Nacional de Desenvolvimento, Cientifico e Technologico, Inst de, Pesquisas Espaciais, Sao. Paulo,, Conselho Nacional de Desenvolvimento Cientifico e Technologico, Inst de Pesquisas Espaciais, Sao. P
关键词
D O I
10.1016/0022-3093(85)90099-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
32
引用
收藏
页码:143 / 155
页数:13
相关论文
共 57 条
[1]   ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1958, 109 (05) :1492-1505
[2]   LOW-TEMPERATURE MAGNETIC-SUSCEPTIBILITY OF SI-P IN THE NON-METALLIC REGION [J].
ANDRES, K ;
BHATT, RN ;
GOALWIN, P ;
RICE, TM ;
WALSTEDT, RE .
PHYSICAL REVIEW B, 1981, 24 (01) :244-260
[3]   HUBBARD MODEL FOR STRUCTURALLY RANDOM SYSTEM [J].
AOKI, H ;
KAMIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (01) :6-12
[4]   BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].
BERGGREN, KF ;
SERNELIUS, BE .
PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986
[5]  
BERGGREN KF, 1978, METAL NONMETAL TRANS
[6]  
BERGGREN KF, 1973, PHIL MAG, V27, P1072
[7]   STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J].
BHATT, RN .
PHYSICAL REVIEW B, 1982, 26 (02) :1082-1085
[8]   EFFECT OF WAVEFUNCTION ANISOTROPY ON THE METAL-INSULATOR-TRANSITION DENSITY IN MANY-VALLEY SEMICONDUCTORS [J].
BHATT, RN .
PHYSICAL REVIEW B, 1981, 24 (06) :3630-3633
[9]   UNIAXIAL STRAIN-DEPENDENT SHALLOW DONOR POLARIZABILITIES .2. A NEW MANY-VALLEY THEORETICAL FORMULATION [J].
CASTNER, TG ;
TAN, HS .
PHYSICAL REVIEW B, 1981, 23 (08) :4000-4012
[10]  
CHAO KA, 1982, PROG THEOR PHYS SUPP, V72, P181