INTEGRATED WAVELENGTH DEMULTIPLEXER-RECEIVER ON INP

被引:5
作者
BORNHOLDT, C
TROMMER, D
UNTERBORSCH, G
BACH, HG
KAPPE, F
PASSENBERG, W
REHBEIN, W
REIER, F
SCHRAMM, C
STENZEL, R
UMBACH, A
VENGHAUS, H
WEINERT, CM
机构
[1] Heinrich-Hertz-Institut für Nachrichtentechnik, Berlin GmbH, D-1000 Berlin 10
关键词
D O I
10.1063/1.107460
中图分类号
O59 [应用物理学];
学科分类号
摘要
A detector stage comprising a photodiode, a field-effect transistor, and a load resistor, and a wavelength demultiplexer have been monolithically integrated in the GaInAsP/InP material system. Chips were mounted into complete modules and operated in a 1.3-mu-m/1.55-mu-m bidirectional transmission link. At 576 Mbit/s and 10(-9) bit error rate the sensitivity of the module was -21 dBm, while the intrinsic sensitivity of the receiver was determined to be -28 dBm.
引用
收藏
页码:971 / 973
页数:3
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