REDUCED TURN-ON DELAY-TIME IN 1.3-MU-M INGAASP/INP N-TYPE MODULATION-DOPED STRAINED MULTIQUANTUM-WELL LASERS

被引：6

作者：

NAKAHARA, K

UOMI, K

TSUCHIYA, T

NIWA, A

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji-shi, Tokyo 185, 1-280, Higashi-koigakubo

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

MODULATION DOPING; SEMICONDUCTOR JUNCTION LASERS;

D O I：

10.1049/el:19950572

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reductions in carrier lifetime, threshold current, and thus turn-on delay time, due to n-type modulation doping, have been experimentally demonstrated in 1.31 mu m InGaAsP strained multiquantum well lasers for the first time.

引用

页码：809 / 811

页数：3

共 8 条

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[6] ULTRALOW THRESHOLD AND UNIFORM OPERATION (1.3+/-0.09-MA) IN 1.3-MU-M STRAINED-MQW 10-ELEMENT LASER ARRAYS FOR PARALLEL HIGH-DENSITY OPTICAL INTERCONNECTS [J].

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[7]

UOMI K, 1994, OEC94 MAKUHARI, P200

[8]

YAMAMOTO K, 1994, IEEE PHOTONIC TECH L, V6, P1165

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