EXTREMELY LOW-THRESHOLD (0.56 MA) OPERATION IN 1.3-MU-M INGAASP/INP COMPRESSIVE-STRAINED-MQW LASERS

被引：5

作者：

UOMI, K

TSUCHIYA, T

KOMORI, M

OKA, A

SHINODA, K

OISHI, A

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 24期

关键词：

SEMICONDUCTOR JUNCTION LASERS; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19941373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A record low threshold current of O.56mA, as a long-wavelength laser, has been obtained in a 1.3 mu m InGaAsP/InP strained-MQW laser, at room temperaturs (25 degrees C), by optimising an active layer and by employing a short cavity with high-reflection coatings.

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页码：2037 / 2038

页数：2

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