SUBMILLIAMP THRESHOLD CURRENT (0.62 MA AT 0-DEGREES-C) AND HIGH OUTPUT POWER (220 MW) 1.5 MU-M TENSILE STRAINED INGAAS SINGLE QUANTUM-WELL LASERS

被引：29

作者：

THIJS, PJA

BINSMA, JJM

TIEMEIJER, LF

VANDONGEN, T

机构：

[1] Philips Optoelectronics Centre, 5600 JA Eindhoven

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 09期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The strain dependence of the threshold current density of lambda = 1.5-mu-m wavelength tensile strained InxGa1-xAs (0.22 < x < 0.53)-InGaAsP single quantum well (SQW) lasers is reported. The optimum indium mole fraction was found to be 0.32 (1.5% strain), resulting in TM polarised lasers with threshold current densities as low as 92 A/cm2. Using this SQW, buried heterostructure lasers with 0.62 mA threshold and 220 mW CW output power were realised.

引用

收藏

页码：829 / 830

页数：2

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