STRAINED SINGLE-QUANTUM-WELL INGAAS LASERS WITH A THRESHOLD CURRENT OF 0.25 MA

被引：18

作者：

CHEN, TR

ENG, LE

ZHAO, B

ZHUANG, YH

YARIV, A

机构：

[1] T. J. Watson Sr. Laboratories of Applied Physics, 128-95 California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 19期

关键词：

D O I：

10.1063/1.110425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained layer single quantum well InGaAs lasers with a record low threshold current of 1 mA for as-cleaved facets and 0.25 mA with high reflectivity coated facets have been demonstrated. In addition, these lasers display a weak dependence of threshold current, quantum efficiency, and lasing wavelength on cavity length in comparison with those single quantum well lasers previously reported.

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页码：2621 / 2623

页数：3

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