A SUBMILLIAMPERE-THRESHOLD MULTIQUANTUM-WELL ALGAAS LASER WITHOUT FACET COATING USING SINGLE-STEP MOCVD

被引：12

作者：

NARUI, H

HIRATA, S

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1992年 / 28卷 / 01期

关键词：

D O I：

10.1109/3.119498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An extremely low threshold current of 0.88 mA under continuous wave (CW) operation was obtained for a three-quantum-well AlGaAs-GaAs laser without facet coating at room temperature. This laser was fabricated using only singlestep metalorganic chemical vapor deposition (MOCVD) on a nonplanar GaAs substrate. The energy conversion efficiency from input electric power to light output power was 42% at 1 mW/facet, which is the highest value for all types of lasers. The laser beam shape was nearly round with an aspect ratio of 0.86.

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页码：4 / 8

页数：5

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