LOW-THRESHOLD SINGLE-QUANTUM-WELL INGAAS/GAAS LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION ON STRUCTURED SUBSTRATES

被引：16

作者：

FRATESCHI, NC

OSINSKI, JS

BEYLER, CA

DAPKUS, PD

机构：

[1] National Center for Integrated Photonic Technology, Department of Electrical Engineering, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 03期

关键词：

D O I：

10.1109/68.122368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold current (as low as 3.0 mA) and high-external efficiency (almost-equal-to 88%) InGaAs/GaAs lasers emitting at 1-mu-m under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates.

引用

页码：209 / 212

页数：4

共 19 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].

ADAMS, AR .

ELECTRONICS LETTERS, 1986, 22 (05) :249-250

[2] WAVELENGTH SWITCHING IN NARROW OXIDE STRIPE INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

BEERNINK, KJ ;

ALWAN, JJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1991, 58 (19) :2076-2078

[3]

CHAO CP, 1991, IEEE PHOTONIC TECH L, V3, P585, DOI [10.1109/68.87921, 10.1063/1.40644]

[4] SUBMILLIAMP THRESHOLD INGAAS-GAAS STRAINED LAYER QUANTUM-WELL LASER [J].

CHEN, TR ;

ENG, L ;

ZHAO, B ;

ZHUANG, YH ;

SANDERS, S ;

MORKOC, H ;

YARIV, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (07) :1183-1190

[5] STRUCTURAL AND COMPOSITIONAL CONTROL OF THE OUTPUT WAVELENGTH OF VERY HIGH-POWER 0.98 MU-M GAINAS LASERS FOR PUMPING FIBER AMPLIFIERS [J].

CHEN, TR ;

ZHUANG, YH ;

MARSHALL, WK ;

XU, YJ ;

YARIV, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (08) :694-696

[6] INGAAS/ALGAAS STRAINED SINGLE QUANTUM-WELL DIODE-LASERS WITH EXTREMELY LOW THRESHOLD CURRENT-DENSITY AND HIGH-EFFICIENCY [J].

CHOI, HK ;

WANG, CA .

APPLIED PHYSICS LETTERS, 1990, 57 (04) :321-323

[7] LOW-THRESHOLD QUANTUM WELL LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON NONPLANAR SUBSTRATES [J].

DZURKO, KM ;

MENU, EP ;

BEYLER, CA ;

OSINSKI, JS ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1450-1458

[8] TEMPERATURE ENGINEERED GROWTH OF LOW-THRESHOLD QUANTUM WELL LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DZURKO, KM ;

MENU, EP ;

BEYLER, CA ;

OSINSKI, JS ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1989, 54 (02) :105-107

[9] LOW-THRESHOLD DISORDER-DEFINED BURIED HETEROSTRUCTURE STRAINED-LAYER ALYGA1-YAS-GAAS-INXGA1-XAS QUANTUM WELL LASERS (LAMBDA-APPROXIMATELY 910 NM) [J].

MAJOR, JS ;

GUIDO, LJ ;

HSIEH, KC ;

HOLONYAK, N ;

STUTIUS, W ;

GAVRILOVIC, P ;

WILLIAMS, JE .

APPLIED PHYSICS LETTERS, 1989, 54 (10) :913-915

[10]

NARUI H, 1990, 12TH IEEE SLC DAV

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