LOW-THRESHOLD SINGLE-QUANTUM-WELL INGAAS/GAAS LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION ON STRUCTURED SUBSTRATES

被引：16

作者：

FRATESCHI, NC

OSINSKI, JS

BEYLER, CA

DAPKUS, PD

机构：

[1] National Center for Integrated Photonic Technology, Department of Electrical Engineering, University of Southern California, Los Angeles

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 03期

关键词：

D O I：

10.1109/68.122368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold current (as low as 3.0 mA) and high-external efficiency (almost-equal-to 88%) InGaAs/GaAs lasers emitting at 1-mu-m under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates.

引用

页码：209 / 212

页数：4

共 19 条

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