ULTRALOW THRESHOLD STRAINED INGAAS-GAAS QUANTUM-WELL LASERS BY IMPURITY-INDUCED DISORDERING

被引：12

作者：

ZOU, WX

MERZ, JL

FU, RJ

HONG, CS

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

[2] BOEING CO,CTR HIGH TECHNOL,SEATTLE,WA 98124

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 14期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19910778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stripe-geometry strained InGaAs-GaAs quantum well lasers were fabricated by impurity induced disordering. Threshold currents as low as 2.2mA at room temperature continuous operation (RT CW) were obtained for uncoated lasers having 1.2-mu-m wide, 215-mu-m long active stripes. The authors believe that this ultralow threshold is mainly due to the very small active stripe width and the excellent electrical confinement of the laser.

引用

页码：1241 / 1243

页数：3

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