VERY DENSE 102-LASER ARRAYS WITH EXTREMELY LOW THRESHOLD CURRENT

被引：9

作者：

HIRATA, S

NARUI, H

MORI, Y

机构：

[1] Sony Corporation Research Center, Hodogaya-ku, Yokohama 240, 174, Fujitsuka-cho

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.105225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

102-laser arrays with a period of 4.5-mu-m were fabricated using single-step metalorganic chemical vapor deposition and were operated uniformly with a threshold current of 1.8 mA per laser and a total output power of 850 mW/facet under continuous wave conditions at room temperature. The active layer of each laser, which was grown on a periodic-ridge-shaped GaAs substrate and was of a multi quantum well structure, was separated from the active layer of adjacent lasers by a current blocking layer, so each laser operated in a stable fundamental lateral mode.

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页码：319 / 321

页数：3

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