PATTERNED QUANTUM WELL SEMICONDUCTOR-LASER ARRAYS

[1] HIGH-POWER WITH HIGH-EFFICIENCY IN A NARROW SINGLE-LOBED BEAM FROM A DIODE-LASER ARRAY IN AN EXTERNAL CAVITY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1465 - 1467

[2] COMPUTER-APPLICATIONS FOR FIBER OPTICS [J]. IEEE COMMUNICATIONS MAGAZINE, 1985, 23 (02) : 16 - 20

[3] LOW-THRESHOLD GAIN-GUIDED COUPLED-STRIPE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED PROCESSING [J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 558 - 560

[4] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2508 - 2510

[5] LOW-THRESHOLD PATTERNED QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1988, 24 (16) : 985 - 986

[6] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 347 - 349

[7] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 607 - 609

[8] DIFFRACTION COUPLED PHASE-LOCKED SEMICONDUCTOR-LASER ARRAY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 554 - 556

[9] ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 88 - 90

[10] MANNOH M, 1985, APPL PHYS LETT, V47, P726

[1] HIGH-POWER WITH HIGH-EFFICIENCY IN A NARROW SINGLE-LOBED BEAM FROM A DIODE-LASER ARRAY IN AN EXTERNAL CAVITY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (21) : 1465 - 1467

[2] COMPUTER-APPLICATIONS FOR FIBER OPTICS [J]. IEEE COMMUNICATIONS MAGAZINE, 1985, 23 (02) : 16 - 20

[3] LOW-THRESHOLD GAIN-GUIDED COUPLED-STRIPE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED PROCESSING [J]. APPLIED PHYSICS LETTERS, 1987, 51 (08) : 558 - 560

[4] INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2508 - 2510

[5] LOW-THRESHOLD PATTERNED QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. ELECTRONICS LETTERS, 1988, 24 (16) : 985 - 986

[6] MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (06) : 347 - 349

[7] PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 607 - 609

[8] DIFFRACTION COUPLED PHASE-LOCKED SEMICONDUCTOR-LASER ARRAY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 554 - 556

[9] ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 88 - 90

[10] MANNOH M, 1985, APPL PHYS LETT, V47, P726